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Selective epitaxial growth of SiC : Thermodynamic analysis of the Si-C-Cl-H and Si-C-Cl-H-O systemsGAO, Y; EDGAR, J. H.Journal of the Electrochemical Society. 1997, Vol 144, Num 5, pp 1875-1880, issn 0013-4651Article

A global growth rate model for aluminum nitride sublimationLIANGHONG LIU; EDGAR, J. H.Journal of the Electrochemical Society. 2002, Vol 149, Num 1, pp G12-G15, issn 0013-4651Article

Substrates for gallium nitride epitaxyLIU, L; EDGAR, J. H.Materials science & engineering. R, Reports. 2002, Vol 37, Num 3, pp III-IV, issn 0927-796X, 69 p.Article

Optimization of Ni-Cr flux growth for hexagonal boron nitride single crystalsHOFFMAN, T. B; CLUBINE, B; ZHANG, Y et al.Journal of crystal growth. 2014, Vol 393, pp 114-118, issn 0022-0248, 5 p.Conference Paper

Growth mechanisms and defect structures of B₁₂As₂ epilayers grown on 4 H-SiC substratesYU ZHANG; HUI CHEN; YIMEI ZHU et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 3-8, issn 0022-0248, 6 p.Conference Paper

Interface properties of an AlN / (AlN), (SiC)_1-x/4H -SiC heterostructureEDGAR, J. H; GU, Z; GU, L et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 15, pp 3720-3725, issn 1862-6300, 6 p.Article

Unstable composition region in the wurtzite B_1-x-yGa_xAl_yN systemWEI, C. H; EDGAR, J. H.Journal of crystal growth. 2000, Vol 208, Num 1-4, pp 179-182, issn 0022-0248Article

MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substratesWEI, C. H; XIE, Z. Y; LI, L. Y et al.Journal of electronic materials. 2000, Vol 29, Num 3, pp 317-321, issn 0361-5235Article

Gaseous etching of 6H-SiC at relatively low temperaturesXIE, Z. Y; WEI, C. H; LI, L. Y et al.Journal of crystal growth. 2000, Vol 217, Num 1-2, pp 115-124, issn 0022-0248Article

X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AIN/6H-SiC(0001)EDGAR, J. H; YU, Z. J; SMITH, D. J et al.Journal of electronic materials. 1997, Vol 26, Num 12, pp 1389-1393, issn 0361-5235Article

Heteroepitaxial B₁₂As₂ on silicon substratesXU, Z; EDGAR, J. H; SPEAKMAN, S et al.Journal of crystal growth. 2006, Vol 293, Num 1, pp 162-168, issn 0022-0248, 7 p.Article

Thermodynamic analysis of Ga_xB_1-xN grown by MOVPEWEI, C. H; EDGAR, J. H.Journal of crystal growth. 2000, Vol 217, Num 1-2, pp 109-114, issn 0022-0248Article

HVPE of scandium nitride on 6H-SiC(0001)EDGAR, J. H; BOHNEN, T; HAGEMAN, P. R et al.Journal of crystal growth. 2008, Vol 310, Num 6, pp 1075-1080, issn 0022-0248, 6 p.Article

Seeded growth of A1N on SiC substrates and defect characterizationLU, P; EDGAR, J. H; CAO, C et al.Journal of crystal growth. 2008, Vol 310, Num 10, pp 2464-2470, issn 0022-0248, 7 p.Article

High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor depositionPENG LU; EDGAR, J. H; GLEMBOCKI, O. J et al.Journal of crystal growth. 2005, Vol 285, Num 4, pp 506-513, issn 0022-0248, 8 p.Article

Bulk AlN crystal growth by direct heating of the source using microwavesZHUANG, D; EDGAR, J. H; LIU, B et al.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 168-174, issn 0022-0248, 7 p.Article

Characterization of aluminum nitride crystals grown by sublimationLIU, L; ZHUANG, D; LIU, B et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 769-774, issn 0031-8965Conference Paper

The effects of the simultaneous addition of diborane and ammonia on the hot-filament-assisted chemical vapor deposition of diamond II. Characterization of diamond and BCN filmXIE, Z. Y; EDGAR, J. H; MCCORMICK, T. L et al.Diamond and related materials. 1998, Vol 7, Num 9, pp 1357-1363, issn 0925-9635Article

Metalorganic surface chemical adsorption deposition of AIN films by ammonia and trimethylaluminumYU, Z. J; EDGAR, J. H; AHMED, A. U et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 1, pp 196-199, issn 0013-4651, 4 p.Article

A comparison of NF₃ and NH₃ as the nitrogen sources for AlN crystal growth by metalorganic chemical wapor depositionEDGAR, J. H; YU, Z. J; SYWE, B. S et al.Thin solid films. 1991, Vol 204, Num 1, pp 115-121, issn 0040-6090Article

Application of oxidation to the structural characterization of SiC epitaxial filmsPOWELL, J. A; PETIT, J. B; EDGAR, J. H et al.Applied physics letters. 1991, Vol 59, Num 2, pp 183-185, issn 0003-6951Article

Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride SubstratesFENG LI; SHISHKIN, Evgeniy; MASTRO, Michael A et al.Langmuir. 2010, Vol 26, Num 13, pp 10725-10730, issn 0743-7463, 6 p.Article

Sublimation crystal growth of yttrium nitrideLI DU; EDGAR, J. H; PEASCOE-MEISNER, Roberta A et al.Journal of crystal growth. 2010, Vol 312, Num 20, pp 2896-2903, issn 0022-0248, 8 p.Article

Sublimation growth of titanium nitride crystalsLI DU; EDGAR, J. H; KENIK, Edward A et al.Journal of materials science. Materials in electronics. 2010, Vol 21, Num 1, pp 78-87, issn 0957-4522, 10 p.Article